BSC011N03LSTATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC011N03LSTATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
Datasheet	BSC011N03LSTATMA1 Datasheet
In Stock	4,142

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	190 mJ
Other Names:	BSC011N03LSTATMA1-ND BSC011N03LSTATMA1TR 2156-BSC011N03LSTATMA1 SP001657064 BSC011N03LSTATMA1DKR BSC011N03LSTATMA1CT INFINFBSC011N03LSTATMA1
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	37 A
Maximum Pulsed Drain Current (IDM):	400 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.0014 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,142	-	-

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