NXP Semiconductors - BLF1822-10,112

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BLF1822-10,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF1822-10,112
Description N-CHANNEL; Configuration: SINGLE; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 200 Cel; Maximum Drain Current (ID): 2.2 A;
Datasheet BLF1822-10,112 Datasheet
In Stock586
NAME DESCRIPTION
Other Names: 934056582112
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 2.2 A
Maximum Drain Current (Abs) (ID): 2.2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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