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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STP100N8F6 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 100 A; |
| Datasheet | STP100N8F6 Datasheet |
| In Stock | 871 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 497-15553-5 |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 100 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Maximum Power Dissipation (Abs): | 176 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 100 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









