STMicroelectronics - STRH100N6FSY01

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STRH100N6FSY01 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STRH100N6FSY01
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 80 A;
Datasheet STRH100N6FSY01 Datasheet
In Stock4,230
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 176 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 80 A
Maximum Drain Current (Abs) (ID): 80 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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