Infineon Technologies - BSZ160N10NS3GATMA1

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BSZ160N10NS3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ160N10NS3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 160 A;
Datasheet BSZ160N10NS3GATMA1 Datasheet
In Stock21,784
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 63 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .016 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 80 mJ
Other Names: BSZ160N10NS3 GINTR-ND
BSZ160N10NS3 G-ND
BSZ160N10NS3 GINDKR-ND
BSZ160N10NS3GATMA1CT
BSZ160N10NS3 GINCT-ND
BSZ160N10NS3G
BSZ160N10NS3 GINDKR
SP000482390
BSZ160N10NS3 GINTR
BSZ160N10NS3 G
BSZ160N10NS3GATMA1DKR
BSZ160N10NS3GATMA1TR
BSZ160N10NS3 GINCT
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
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