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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSC190N15NS3GATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PDSO-N8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | BSC190N15NS3GATMA1 Datasheet |
| In Stock | 17,914 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 50 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 125 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .019 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 170 mJ |
| Other Names: |
BSC190N15NS3GATMA1TR BSC190N15NS3G BSC190N15NS3 GCT BSC190N15NS3GATMA1DKR BSC190N15NS3GATMA1DKR-NDTR-ND SP000416636 BSC190N15NS3 G-ND BSC190N15NS3 GDKR BSC190N15NS3 G BSC190N15NS3GATMA1CT BSC190N15NS3 GDKR-ND BSC190N15NS3 GCT-ND BSC190N15NS3 GTR BSC190N15NS3 GTR-ND BSC190N15NS3GATMA1CT-NDTR-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 150 V |
| Qualification: | Not Qualified |









