SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FCH150N65F-F155

Onsemi

N-CHANNEL

SINGLE

NO

298 W

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

24 A

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5833NWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

2SK3980

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.9 A

FQPF5P20RDTU

Onsemi

P-CHANNEL

SINGLE

NO

38 W

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

3.4 A

e3

NTMFS5C612NL1G

Onsemi

N-CHANNEL

SINGLE

YES

139 W

ENHANCEMENT MODE

1

226 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

226 A

ECH8419

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

35 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.017 ohm

9 A

DUAL

R-PDSO-F8

2SK3816-DL-1E

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

60 mJ

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

1.65 W

150 Cel

SILICON

TIN

.04 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

197 pF

2SK3825

Onsemi

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

74 A

2SK3485

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

NTMFS4965NFT3G

Onsemi

N-CHANNEL

SINGLE

YES

22.73 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

65 A

1

e3

30

260

2SK1131

Onsemi

N-CHANNEL

SINGLE

NO

.1 W

ENHANCEMENT MODE

1

.001 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.001 A

2SJ653

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

148 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.037 ohm

37 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SK3817(SMP-FD)

Onsemi

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

IRF610

Onsemi

N-CHANNEL

SINGLE

NO

43 W

ENHANCEMENT MODE

1

3.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

3.3 A

e0

235

NTMFS4C01NT3G

Onsemi

N-CHANNEL

SINGLE

YES

3.2 W

1

303 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

303 A

1

e3

30

260

2SK3818(SMP)

Onsemi

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

74 A

MCH3431

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

2SK3618(TP)

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

ECH8419TL

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

35 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.017 ohm

9 A

DUAL

R-PDSO-F8

NTMFS4H02NFT3G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

NTD20N08L

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

NVMFS5C460NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

2SK1474FA

Onsemi

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NVMFS5833NT3G

Onsemi

N-CHANNEL

SINGLE

YES

112 W

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

2SK1067-3

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK3816-1E

Onsemi

N-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

60 mJ

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

1.65 W

150 Cel

SILICON

.04 ohm

40 A

SINGLE

R-PSIP-T3

TO-262AA

197 pF

2SK3818-E

Onsemi

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

74 A

e6

2SK3492(TP)

Onsemi

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NTF3N08L

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.155 ohm

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261

e0

NVD5C486NLT4G

Onsemi

N-CHANNEL

SINGLE

YES

18 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

63 mJ

24 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0245 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

13 pF

AEC-Q101

IRFU220BTU-AM002

Onsemi

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

4.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

4.6 A

e3

MCH3477

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SK3819(SMP-FD)

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

2SK1459

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

2.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

2SK1920

Onsemi

N-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

CPH6413

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

2SK3815(SMP-FD)

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

23 A

NVMFS5C604NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

287 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

287 A

1

e3

30

260

FCP150N65F

Onsemi

N-CHANNEL

SINGLE

NO

298 W

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

24 A

e3

NOT SPECIFIED

NOT SPECIFIED

2SK2621

Onsemi

N-CHANNEL

SINGLE

NO

120 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

2SK1455

Onsemi

N-CHANNEL

SINGLE

NO

1.75 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

NVMFS4C05NWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

116 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

116 A

1

e3

30

260

2SK2161

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

36 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.35 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

MCH3459

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

2SK2970

Onsemi

N-CHANNEL

SINGLE

YES

40 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

13 A

2SK2556

Onsemi

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

FDBL9401-F085

Onsemi

N-CHANNEL

SINGLE

YES

429 W

1

300 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

300 A

1

e3

30

260

2SK3817-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

60 A

1

e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.