SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFS4H02NT3G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

NTD26N08

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.041 ohm

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

2SK2747

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

NVMFS4C05NT1G

Onsemi

N-CHANNEL

SINGLE

YES

79 W

1

116 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

116 A

1

e3

30

260

MCH3456

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

2SK2622

Onsemi

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

ECH8401

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

CPH6337-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3.5 A

1

e6

2SK1447

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

2SK1412

Onsemi

N-CHANNEL

SINGLE

NO

2 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

FQPF9N25CYDTU

Onsemi

N-CHANNEL

SINGLE

NO

38 W

ENHANCEMENT MODE

1

8.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

8.8 A

e3

NTMFS5C442NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

69 W

1

121 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

121 A

1

e3

30

260

2SK3490

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NTMFS4H01NFT1G

Onsemi

N-CHANNEL

SINGLE

YES

125 W

1

334 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

334 A

1

e3

30

260

NVMFS5C604NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

287 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

287 A

1

e3

30

260

CPH6604

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

CPH6414

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

NTD4979N-35G

Onsemi

N-CHANNEL

SINGLE

NO

26.3 W

1

41 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

41 A

1

e3

30

260

NVMFS5826NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

39 W

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

26 A

1

e3

30

260

2SK2142

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

250 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

48 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.35 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

MCH3410

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NTD20N08

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

2SK3856-6

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

NTF2N08L

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261

e0

ECH8402

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2SK3816-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

40 A

1

e6

2SK3283TP-FA

Onsemi

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

NTMFS4H02NT1G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

FDPF7N60NZT

Onsemi

N-CHANNEL

SINGLE

NO

33 W

1

6.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

6.5 A

e3

2SK2270

Onsemi

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK3280TP-FA

Onsemi

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

ECH8320-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

9.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

9.5 A

1

e6

2SK3617(TP)

Onsemi

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

ECH8419-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

1

9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

9 A

1

e6

2SK3820(SMP-FD)

Onsemi

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

26 A

CPH6354-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4 A

1

e6

30

260

2SK2153

Onsemi

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

4 A

2SK3818-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

74 A

1

e6

NTF2N08

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

DUAL

R-PDSO-G4

DRAIN

Not Qualified

TO-261

e0

MCH3414-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

1 A

1

e6

NVMFS5C460NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

NTMFS4833NAT1G

Onsemi

N-CHANNEL

SINGLE

YES

113.6 W

ENHANCEMENT MODE

1

191 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

191 A

1

e3

30

260

FCPF600N60Z

Onsemi

N-CHANNEL

SINGLE

NO

28 W

1

7.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

7.4 A

e3

NOT SPECIFIED

NOT SPECIFIED

2SK3836

Onsemi

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

33 A

FQPF9N25CT

Onsemi

N-CHANNEL

SINGLE

NO

38 W

1

8.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

8.8 A

e3

MCH3408

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

2SK3978(TP-FA)

Onsemi

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NCV8440CWP

Onsemi

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.