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Manufacturer | Onsemi |
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Manufacturer's Part Number | NVMFS5C604NLT1G |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; |
Datasheet | NVMFS5C604NLT1G Datasheet |
In Stock | 2,337 |
NAME | DESCRIPTION |
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Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 287 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - annealed |
JESD-609 Code: | e3 |
Maximum Power Dissipation (Abs): | 200 W |
No. of Elements: | 1 |
Maximum Operating Temperature: | 175 Cel |
Maximum Drain Current (Abs) (ID): | 287 A |
Peak Reflow Temperature (C): | 260 |
Moisture Sensitivity Level (MSL): | 1 |