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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NVMFS5C604NLT1G |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; |
| Datasheet | NVMFS5C604NLT1G Datasheet |
| In Stock | 2,337 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
2156-NVMFS5C604NLT1G-OS NVMFS5C604NLT1G-ND 488-NVMFS5C604NLT1GTR 488-NVMFS5C604NLT1GCT ONSNVMFS5C604NLT1G 488-NVMFS5C604NLT1GDKR |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 287 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 200 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 287 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









