SINGLE Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
MCH6336-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		5 A			1				e6
FP501	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR								.5 A
FW217	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
CPH3422	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1 A
MCH5811	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							1.5 A
BUZ80A	Onsemi	N-CHANNEL	SINGLE	NO	75 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN LEAD		3 A							e0		235
6HN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.2 A
MTP15N05EL	Onsemi	N-CHANNEL	SINGLE	NO	75 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD	.1 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e0		235
CPH3449	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.5 A
5LN01C	Onsemi	N-CHANNEL	SINGLE	YES	.25 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.1 A
NTB70N08	Onsemi	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		SILICON				TIN LEAD			SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e0
FSS245	Onsemi	N-CHANNEL	SINGLE	YES	2.9 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							11 A
CPH3427	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1 A
FW501	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR								7 A
CPH3423	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.5 A
NTP4813NLT4G	Onsemi	N-CHANNEL	SINGLE	NO	60 W							1			51 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							51 A
ATP107-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	50 W							1			50 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		50 A			1				e6
FTS2053	Onsemi	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2 A
EMH2408	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						DEPLETION MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4 A
3LN03M-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Bismuth (Sn/Bi)		.35 A			1				e6
MTE30N50E	Onsemi	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							30 A
SFT1440(TP)	Onsemi	N-CHANNEL	SINGLE	NO	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.5 A
MCH6413	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2 A
FW257	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2 A
2SK4197FS	Onsemi	N-CHANNEL	SINGLE	NO	28 W							1			3.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin (Sn)		3.3 A							e3
SCH2401	Onsemi	N-CHANNEL	SINGLE	YES	.65 W						ENHANCEMENT MODE	1			.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.7 A
NDTL1N60ZT1G	Onsemi	N-CHANNEL	SINGLE	YES	3 W							1			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.3 A
ATP214	Onsemi	N-CHANNEL	SINGLE	YES	60 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							75 A
CPH3414	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2.2 A
ATP404	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			95 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							95 A
CPH5871	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						DEPLETION MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							3.5 A
MCH5826	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							1.8 A
FX204	Onsemi	N-CHANNEL	SINGLE	NO	2 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR								4 A
ATP212-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	40 W							1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		35 A			1				e6	30	260
2SK669	Onsemi	N-CHANNEL	SINGLE	NO	.2 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		.1 A
MTB3N100E	Onsemi	N-CHANNEL	SINGLE	YES	125 W	PLASTIC/EPOXY		1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	4 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e0	30	235
FSS804	Onsemi	N-CHANNEL	SINGLE	YES	3.3 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							14 A
FCH47N60F	Onsemi	N-CHANNEL	SINGLE	NO	417 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	141 A	1800 mJ	47 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	880 ns	-55 Cel	1260 ns		.073 ohm	47 A	SINGLE	R-PSFM-T3				TO-247				250 pF
CPH5811	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel							3 A
FTS2052	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							2.5 A
MCH6437-TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							7 A
MCH6630	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.7 A
ATP602	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							5 A
NDF08N50ZH	Onsemi	N-CHANNEL	SINGLE	NO	35 W							1			8.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		8.5 A							e3
2SK4098FG	Onsemi	N-CHANNEL	SINGLE	NO	33 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
MCH6437-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		7 A			1				e6	30	260
EMH1402	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
MTA1N60E	Onsemi	N-CHANNEL	SINGLE	NO	40 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		1 A							e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.