SINGLE Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
ATP203	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					75 A
CPH3413	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.2 A
EC4402C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.1 A
CPH5805	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					3 A
FW513	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						DEPLETION MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.35 A
MTB75N05HDG	Onsemi	N-CHANNEL	SINGLE	YES	125 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					75 A			1					260
ATP103-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	50 W							1			55 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN BISMUTH		55 A			1			e6	30	260
SFT1445(TP)	Onsemi	N-CHANNEL	SINGLE	NO	35 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					17 A
MCH6337-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN BISMUTH		4.5 A			1			e6	30	260
SFT1440(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					1.5 A
FSS250	Onsemi	N-CHANNEL	SINGLE	YES	1.8 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
SCH1433	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3.5 A
ATP212	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					35 A
5HN01N	Onsemi	N-CHANNEL	SINGLE	NO	.4 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.1 A
CPH5839	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					2 A
2SK4124-1E	Onsemi	N-CHANNEL	SINGLE	NO	170 W							1			20 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN		20 A						e3
CPH3442	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					6.5 A
MTA4N60E	Onsemi	N-CHANNEL	SINGLE	NO	60 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		4 A						e0
FW811	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8 A
NTH4L040N65S3F	Onsemi	N-CHANNEL	SINGLE	NO	446 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	162.5 A	1009 mJ	65 A	4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	446 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.04 ohm	65 A	SINGLE	R-PSFM-T4		ISOLATED	TO-247	e3
NDDL1N60Z-1G	Onsemi	N-CHANNEL	SINGLE	NO	25 W							1			.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.8 A
2SK4121LS	Onsemi	N-CHANNEL	SINGLE	NO	35 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		12 A
MCH5812	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					2 A
FCP380N60E	Onsemi	N-CHANNEL	SINGLE	NO	106 W							1			10.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn) - annealed		10.2 A						e3	NOT SPECIFIED	NOT SPECIFIED
3LN01SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W						ENHANCEMENT MODE	1			.15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.15 A
SFT1427(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
FW803	Onsemi	N-CHANNEL	SINGLE	YES	2.4 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					11 A
CPH5809	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					3 A
FW250	Onsemi	N-CHANNEL	SINGLE	YES	2.2 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3 A
2SK544	Onsemi	N-CHANNEL	SINGLE	NO	.3 W						ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					.03 A
FSS234	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					12 A
CPH3438	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4.5 A
MPF9200	Onsemi	N-CHANNEL	SINGLE	NO	.6 W						ENHANCEMENT MODE	1			.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN LEAD		.4 A						e0		235
2SK4198FG	Onsemi	N-CHANNEL	SINGLE	NO	30 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4 A
MLD1N06CLG	Onsemi	N-CHANNEL	SINGLE	YES	40 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel
2SK536	Onsemi	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					.1 A
MCH5804	Onsemi	N-CHANNEL	SINGLE	YES	.8 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					1.4 A
3SK108S	Onsemi	N-CHANNEL	SINGLE	NO	.25 W							1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					.03 A
SFT1405(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A
BBL4001	Onsemi	N-CHANNEL	SINGLE	NO	35 W							1			74 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		74 A
ATP201	Onsemi	N-CHANNEL	SINGLE	YES	30 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					35 A
EMH1405-TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.5 A
CPH5831	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					3 A
MCH6406	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
SFT1405(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A
CPH3437	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4.5 A
ATP405	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					40 A
FSS294	Onsemi	N-CHANNEL	SINGLE	YES	3 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					13 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.