NDDL1N60Z-1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NDDL1N60Z-1G
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	NDDL1N60Z-1G Datasheet
In Stock	2,138

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	25 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	.8 A
Maximum Drain Current (Abs) (ID):	.8 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,138	-	-

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

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