MTB3N100E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MTB3N100E
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSSO-G2; Terminal Position: SINGLE;
Datasheet	MTB3N100E Datasheet
In Stock	1,081

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	2
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	4 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3 A
Peak Reflow Temperature (C):	235

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,081	-	-

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