NVD5C464NLT4G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVD5C464NLT4G
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34 W; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
Datasheet	NVD5C464NLT4G Datasheet
In Stock	1,735

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	64 A
Maximum Pulsed Drain Current (IDM):	340 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	34 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0077 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	158 mJ
Other Names:	NVD5C464NLT4G-ND 488-NVD5C464NLT4GTR 2832-NVD5C464NLT4GTR 2832-NVD5C464NLT4G-488 488-NVD5C464NLT4GCT 488-NVD5C464NLT4GDKR
Maximum Feedback Capacitance (Crss):	34 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	64 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,735	$0.940	$1,630.900

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