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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NVD4C05NT4G |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; |
| Datasheet | NVD4C05NT4G Datasheet |
| In Stock | 157 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
488-NVD4C05NT4GCT NVD4C05NT4G-ND 488-NVD4C05NT4GTR 488-NVD4C05NT4GDKR 2156-NVD4C05NT4G |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 61 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 44 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 61 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









