Vishay Intertechnology - SQJ431AEP-T1_GE3

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SQJ431AEP-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQJ431AEP-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 9.4 A;
Datasheet SQJ431AEP-T1_GE3 Datasheet
In Stock25,407
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9.4 A
Maximum Pulsed Drain Current (IDM): 37 A
Surface Mount: YES
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .315 ohm
Avalanche Energy Rating (EAS): 45 mJ
Other Names: SQJ431AEP-T1_GE3TR
SQJ431AEP-T1_GE3CT
SQJ431AEP-T1_GE3DKR
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 200 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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