SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

AUIRFB8407

Infineon Technologies

N-CHANNEL

SINGLE

NO

230 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

195 A

NOT SPECIFIED

NOT SPECIFIED

AUIRFB8409

Infineon Technologies

N-CHANNEL

SINGLE

NO

375 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

195 A

NOT SPECIFIED

NOT SPECIFIED

AUIRFR8405TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

163 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

AUIRFSL8405

Infineon Technologies

N-CHANNEL

SINGLE

NO

163 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

1

AUIRFU8403

Infineon Technologies

N-CHANNEL

SINGLE

NO

99 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

1

AUIRLR014N

Infineon Technologies

N-CHANNEL

SINGLE

YES

28 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

1

AUIRLR014NTR

International Rectifier

N-CHANNEL

SINGLE

YES

28 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

BUK7Y113-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

12 A

BUK7Y153-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

37.3 W

ENHANCEMENT MODE

1

9.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

9.4 A

BUK7Y19-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

169 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

56 A

BUZ905

Tt Electronics Plc

P-CHANNEL

SINGLE

NO

METAL

AMPLIFIER

160 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

8 A

BOTTOM

O-MBFM-P2

SOURCE

Not Qualified

TO-3

CSD17581Q3A

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

154 A

76 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0047 ohm

21 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED

e3

30

260

195 pF

FCD5N60_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

54 W

1

4.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.6 A

1

FCD5N60-F085

Onsemi

N-CHANNEL

SINGLE

YES

54 W

1

4.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.6 A

1

e3

30

260

FCPF650N80Z

Onsemi

N-CHANNEL

SINGLE

NO

30.5 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

8 A

e3

NOT SPECIFIED

NOT SPECIFIED

FDC3512-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

IRF510L

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.54 ohm

5.6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF644

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.28 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

IRLR024NTRR

International Rectifier

N-CHANNEL

SINGLE

YES

45 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

38 W

175 Cel

SILICON

TIN LEAD

.065 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e0

IRLR7821CTRPBF

International Rectifier

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

65 A

1

e3

30

260

JAN2N6849

Defense Logistics Agency

P-CHANNEL

SINGLE

NO

25 W

1

6.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

6.5 A

Not Qualified

e0

JANSR2N7490T3

Defense Logistics Agency

N-CHANNEL

SINGLE

NO

UNSPECIFIED

250 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

40 A

58 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

10 A

SINGLE

S-XSFM-P3

DRAIN

Not Qualified

RADIATION HARDENED

TO-257AA

MIL-19500/705

JANSR2N7555U3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

MCH6337-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

1.5 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

4.5 A

1

e6

NDP606AEL

National Semiconductor

N-CHANNEL

SINGLE

NO

100 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

100 W

175 Cel

SILICON

TIN LEAD

.025 ohm

48 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

NP180N04TUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

348 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

NVMFS5C460NLWFAFT3G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

PH7030LT/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

62.5 W

ENHANCEMENT MODE

1

68 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

68 A

PMXB360ENEAZ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

6.25 W

ENHANCEMENT MODE

1

1.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.1 A

PSMN4R2-60PLQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

130 A

PSMN9R5-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

211 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

89 A

e3

RSS050P03FU6TB

ROHM

P-CHANNEL

SINGLE

YES

2 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

1

10

260

SGT120R65AL

STMicroelectronics

N-CHANNEL

SINGLE

YES

192 W

PLASTIC/EPOXY

SWITCHING

650 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

36 A

8

SMALL OUTLINE

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-55 Cel

.12 ohm

15 A

DUAL

R-PDSO-F8

DRAIN

BULK: 3000

.9 pF

SI2302DS

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.8 A

e0

SI4480EY-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

3 W

ENHANCEMENT MODE

1

6.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

6.2 A

e0

SI5476DU-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

31 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

SI7414DN-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

5.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.6 A

e0

SI7454DP-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

4.8 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5 A

e0

SIHB24N65E-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

250 W

1

24 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

SSM3K16FU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

30

260

STD12N65M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

85 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

STU2N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

60 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

STW57N65M5-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

1

42 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

NOT SPECIFIED

NOT SPECIFIED

VN10KM

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

.31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.31 A

VNP28N04-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

40 A

e3

2SK1974

ROHM

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

BLF404,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.3 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

1.5 A

CSD19505KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

510 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0038 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

34 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.