Vishay Intertechnology - SIHB24N65E-GE3

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SIHB24N65E-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIHB24N65E-GE3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Drain Current (Abs) (ID): 24 A; No. of Elements: 1;
Datasheet SIHB24N65E-GE3 Datasheet
In Stock1,621
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 250 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 24 A
Maximum Drain Current (Abs) (ID): 24 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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