Onsemi - CPH6354-TL-W

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CPH6354-TL-W by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number CPH6354-TL-W
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet CPH6354-TL-W Datasheet
In Stock1,432
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Maximum Pulsed Drain Current (IDM): 16 A
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .1 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: CPH6354-TL-W-ND
CPH6354-TL-WOSCT
CPH6354-TL-WOSDKR
CPH6354-TL-WOSTR
2156-CPH6354-TL-W-OS
ONSONSCPH6354-TL-W
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): 260
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