NXP Semiconductors - PSMN4R2-60PLQ

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PSMN4R2-60PLQ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN4R2-60PLQ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 263 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
Datasheet PSMN4R2-60PLQ Datasheet
In Stock740
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 263 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 130 A
Maximum Drain Current (Abs) (ID): 130 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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