STMicroelectronics - STD12N65M2

  1. Home
  2. STMicroelectronics - STD12N65M2
STD12N65M2 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STD12N65M2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
Datasheet STD12N65M2 Datasheet
In Stock743
NAME DESCRIPTION
Other Names: 497-15458-2
497-15458-1
497-15458-6
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): 85 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 8 A
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
743 - -

Popular Products

Category Top Products

FQB22P10TM by Onsemi

FQB22P10TM

Onsemi

FQB22P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has an EAS of 710 mJ and can handle up to 125W power dissipation at 175°C.
IRF7493TRPBF by International Rectifier

IRF7493TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
FQB12P20TM by Fairchild Semiconductor

FQB12P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
IRFR6215TRPBF by Infineon Technologies

IRFR6215TRPBF

Infineon Technologies

Infineon's IRFR6215TRPBF is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W. Suitable for surface mount with GULL WING terminals, it has an operating temp range of -55 to 175 °C.
IPA80R650CEXKSA2 by Infineon Technologies

IPA80R650CEXKSA2

Infineon Technologies

Infineon's IPA80R650CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
AUIRF5210STRL by Infineon Technologies

AUIRF5210STRL

Infineon Technologies

AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
ZXMP6A17GTA by Zetex Plc

ZXMP6A17GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
FDS3890 by Onsemi

FDS3890

Onsemi

FDS3890 by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS, built-in DIODE, and 0.044 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, has a max power dissipation of 2W, and can withstand temperatures up to 175°C.
IRFP460 by Intersil

IRFP460

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 960 mJ;
IRF9530NSTRLPBF by Infineon Technologies

IRF9530NSTRLPBF

Infineon Technologies

IRF9530NSTRLPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, 56A IDM, and 0.2 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 175°C Max Operating Temp.
FDC5612-F095 by Fairchild Semiconductor

FDC5612-F095

Fairchild Semiconductor

FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
IRLL014NTRPBF by International Rectifier

IRLL014NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
NDT452AP by Fairchild Semiconductor

NDT452AP

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
SI7232DN-T1-GE3 by Vishay Intertechnology

SI7232DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7232DN-T1-GE3 is an N-channel Power FET with 2 elements, built-in diode, and a max drain current of 25A. Ideal for switching applications, it operates in enhancement mode with a min DS breakdown voltage of 20V. With a package style of small outline and matte tin terminal finish, it offers high performance in a compact design.
BSP318SH6327XTSA1 by Infineon Technologies

BSP318SH6327XTSA1

Infineon Technologies

Infineon's BSP318SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 10.4A Pulsed Drain Current. Ideal for automotive applications, it features a built-in diode, 0.15 ohm On Resistance, and 260°C Peak Reflow Temperature.
FDMC5614P by Fairchild Semiconductor

FDMC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: S-PDSO-F5;
2N7002PS,115 by NXP Semiconductors

2N7002PS,115

NXP Semiconductors

2N7002PS,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.32A Max Drain Current and 0.99W Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
IPT007N06NATMA1 by Infineon Technologies

IPT007N06NATMA1

Infineon Technologies

IPT007N06NATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 1944A IDM, and 0.00075 ohm RDS(ON). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
NDT2955 by National Semiconductor

NDT2955

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF9640STRLPBF by Vishay Intertechnology

IRF9640STRLPBF

Vishay Intertechnology

Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.