NXP Semiconductors - PMXB360ENEAZ

  1. Home
  2. NXP Semiconductors - PMXB360ENEAZ
PMXB360ENEAZ by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMXB360ENEAZ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 1.1 A;
Datasheet PMXB360ENEAZ Datasheet
In Stock12,419
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 6.25 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.1 A
Maximum Drain Current (Abs) (ID): 1.1 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
12,419 - -

Popular Products

Category Top Products

SI7439DP-T1-E3 by Vishay Intertechnology

SI7439DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7439DP-T1-E3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 50A IDM, 80mJ EAS, and 0.09 ohm Drain-Source On Resistance. Operating at up to 150°C, it has a small outline package style for efficient heat dissipation.
IRF530A by Fairchild Semiconductor

IRF530A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
IRLML2502TR by International Rectifier

IRLML2502TR

International Rectifier

IRLML2502TR by International Rectifier is a N-CHANNEL FET for switching applications. It has a 20V DS breakdown voltage, 4.2A max drain current, and 0.045 ohm max on-resistance. With a built-in diode, it operates in enhancement mode with 33A pulsed drain current ideal for power management in compact electronic devices.
AUIRFN8459TR by Infineon Technologies

AUIRFN8459TR

Infineon Technologies

AUIRFN8459TR by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 66mJ EAS, and 0.0059 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has DUAL terminals and AEC-Q101 standard compliance.
IRF5210PBF by International Rectifier

IRF5210PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
FDN5618P_NL by Fairchild Semiconductor

FDN5618P_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN5618P_NL is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 1.25A and 0.17 ohm On Resistance. The transistor operates in ENHANCEMENT MODE, has a Max Power Dissipation of 0.5W, and can handle up to 10A Pulsed Drain Current.
IAUT300N10S5N015ATMA1 by Infineon Technologies

IAUT300N10S5N015ATMA1

Infineon Technologies

Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
IRFP450PBF by International Rectifier

IRFP450PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 760 mJ;
IRFHS9301TRPBF by Infineon Technologies

IRFHS9301TRPBF

Infineon Technologies

Infineon's IRFHS9301TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.037 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with DUAL terminals.
BSZ100N06LS3GXT by Infineon Technologies

BSZ100N06LS3GXT

Infineon Technologies

Infineon's BSZ100N06LS3GXT is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 55mJ EAS, and 0.0179 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 50W in a small outline package.
IPB180P04P4L02ATMA2 by Infineon Technologies

IPB180P04P4L02ATMA2

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
FQD1N80TM by Fairchild Semiconductor

FQD1N80TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 1 A;
SI7155DP-T1-GE3 by Vishay Intertechnology

SI7155DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7155DP-T1-GE3 is a P-channel FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W. The MOSFET features a drain-source on resistance of 0.0046 ohm and can withstand temperatures from -55 to 150°C.
FDS3672 by Onsemi

FDS3672

Onsemi

FDS3672 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has an EAS of 416mJ and 0.023 ohm RDS(on).
BSP135H6327XTSA1 by Infineon Technologies

BSP135H6327XTSA1

Infineon Technologies

Infineon's BSP135H6327XTSA1 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it has 0.48A IDM and 0.12A ID. Widely used in automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
CSD18504Q5AT by Texas Instruments

CSD18504Q5AT

Texas Instruments

CSD18504Q5AT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 275A IDM, and 0.0098 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.
IRF7493TRPBF-1 by Infineon Technologies

IRF7493TRPBF-1

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
IRFH4251DTRPBF by International Rectifier

IRFH4251DTRPBF

International Rectifier

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Case Connection: SOURCE; Maximum Drain Current (Abs) (ID): 188 A;
SQM40P10-40L_GE3 by Vishay Intertechnology

SQM40P10-40L_GE3

Vishay Intertechnology

The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
IXTK3N250L by Littelfuse

IXTK3N250L

Littelfuse

IXTK3N250L by Littelfuse is a N-CHANNEL FET with 2500V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features 8A IDM, 417W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With a max operating temperature of 150°C and -55°C min, it offers reliable performance in various environments.