SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9Y12-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

85 A

1

e3

30

260

IRF9640LPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

30

260

IRLZ14PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

43 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.2 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

PMZB790SN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.65 A

1

e3

30

260

PSMN3R5-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

ZXMS6001N3TA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

550 mJ

1.1 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.675 ohm

1.1 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

TO-261AA

e3

30

260

2SJ589LS

Sanyo Electric

P-CHANNEL

SINGLE

NO

25 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

60 A

15 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.115 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

AOT480L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

333 W

ENHANCEMENT MODE

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

FQPF7N65CYDTU

Onsemi

N-CHANNEL

SINGLE

NO

52 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7 A

e3

IRFZ48SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

190 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.018 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRL620SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

5.2 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

IRLZ14STRRPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

43 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

68 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.2 ohm

10 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

PSMN016-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

148 W

ENHANCEMENT MODE

1

57 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

57 A

1

e3

30

245

PSMN2R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN2R2-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

141 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN2R6-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN7R0-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

48 W

ENHANCEMENT MODE

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

61 A

1

e3

30

260

SI2328DS-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

1.15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1.15 A

e0

SI7336ADP-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

5.4 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

30 A

e0

STB46NF30

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

42 A

1

e3

30

245

STFW2N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NOT SPECIFIED

NOT SPECIFIED

STW40N95K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

450 W

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

38 A

NOT SPECIFIED

NOT SPECIFIED

2N7002BKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.32 W

ENHANCEMENT MODE

1

.29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN

.29 A

1

e3

30

260

AOW4S60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AUIRFR4620TRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

144 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

24 A

BF2030R-E6814

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

1

260

BF998

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

BF998B-GS08

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

BLF640U

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BUK755R4-100E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

BUK7613-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

96 W

ENHANCEMENT MODE

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

58 A

1

e3

30

245

BUK7Y25-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

34 A

BUK964R8-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

234 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

IRF7413QTRPBF

International Rectifier

N-CHANNEL

SINGLE

YES

2.5 W

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

IRFP9140

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

180 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

960 mJ

21 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.2 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

IRFZ24SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.1 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

JANTXV2N7236U

Infineon Technologies

P-CHANNEL

SINGLE

YES

125 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

18 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

HIGH RELIABILITY

TO-267AB

e0

PSMN034-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

86 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

32 A

e3

PSMN7R0-60YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

117 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

89 A

1

e3

30

260

STF20N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

18 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

NOT SPECIFIED

NOT SPECIFIED

STH270N4F3-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

2382

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2383

Nte Electronics

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.4 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2386

Nte Electronics

N-CHANNEL

SINGLE

NO

METAL

SWITCHING

600 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.2 ohm

6.2 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-3

2N3819-D74Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.35 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.05 A

e3

AOB10N60L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

250 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

AOI4126

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

43 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

43 A

BF998R

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.