NXP Semiconductors - 2N7002BKT,115

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2N7002BKT,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 2N7002BKT,115
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .32 W; Maximum Drain Current (Abs) (ID): .29 A; Maximum Drain Current (ID): .29 A;
Datasheet 2N7002BKT,115 Datasheet
NAME DESCRIPTION
Other Names: 2N7002BKT,115-ND
568-5978-1
954-2N7002BKT115
568-5978-2
934064285115
568-5978-6
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .29 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Power Dissipation (Abs): .32 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .29 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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