Alpha & Omega Semiconductor - AOI4126

  1. Home
  2. Alpha & Omega Semiconductor - AOI4126
AOI4126 by Alpha & Omega Semiconductor

Image shown is a representation only.

Manufacturer Alpha & Omega Semiconductor
Manufacturer's Part Number AOI4126
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
Datasheet AOI4126 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 100 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 43 A
Maximum Drain Current (Abs) (ID): 43 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRFP460LC by Vishay Siliconix

IRFP460LC

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
IRFZ44NLPBF by Infineon Technologies

IRFZ44NLPBF

Infineon Technologies

IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.
FQB12P20TM by Fairchild Semiconductor

FQB12P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
TN2510N8-G by Supertex

TN2510N8-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PSSO-F3; Maximum Feedback Capacitance (Crss): 25 pF;
FDD8424H by Fairchild Semiconductor

FDD8424H

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STL57N65M5 by STMicroelectronics

STL57N65M5

STMicroelectronics

STL57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 960mJ EAS, and 0.069 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a DRAIN case connection.
FQB47P06TM_AM002 by Fairchild Semiconductor

FQB47P06TM_AM002

Fairchild Semiconductor

Fairchild Semiconductor's FQB47P06TM_AM002 is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 188A IDM, 820mJ EAS, and 0.026 ohm RDS(ON). With a max power dissipation of 160W and operating temperature up to 175°C, it offers reliable performance in various electronic systems.
IPT020N10N3ATMA1 by Infineon Technologies

IPT020N10N3ATMA1

Infineon Technologies

IPT020N10N3ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1200A IDM, and 0.02 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
BSZ097N04LSGATMA1 by Infineon Technologies

BSZ097N04LSGATMA1

Infineon Technologies

Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
BSP317PH6327XTSA1 by Infineon Technologies

BSP317PH6327XTSA1

Infineon Technologies

BSP317PH6327XTSA1 by Infineon is a P-CHANNEL FET with 250V DS breakdown voltage. It features a single configuration with built-in diode, suitable for enhancement mode operation. This MOSFET has 1.72A max pulsed drain current and is ideal for automotive applications meeting AEC-Q101 standards.
IRF540ZLPBF by Infineon Technologies

IRF540ZLPBF

Infineon Technologies

IRF540ZLPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 92W and 0.0265 ohm Drain-Source On Resistance. Operating at up to 175°C, it features a METAL-OXIDE SEMICONDUCTOR technology in an IN-LINE package style.
IRFH5004TRPBF by International Rectifier

IRFH5004TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
ZVN2110GTA by Diodes Incorporated

ZVN2110GTA

Diodes Incorporated

ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.
IRF640NLPBF by Infineon Technologies

IRF640NLPBF

Infineon Technologies

IRF640NLPBF by Infineon Technologies is a N-CHANNEL FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE at up to 175°C.
IRF7842TRPBF by International Rectifier

IRF7842TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;
BSS138BK,215 by NXP Semiconductors

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
IRFP460 by Vishay Intertechnology

IRFP460

Vishay Intertechnology

Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
IRFR9024PBF by International Rectifier

IRFR9024PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Power Dissipation Ambient: 42 W; No. of Terminals: 2;
SQM40P10-40L_GE3 by Vishay Intertechnology

SQM40P10-40L_GE3

Vishay Intertechnology

The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
BUK9M85-60EX by Nexperia

BUK9M85-60EX

Nexperia

BUK9M85-60EX by Nexperia is a N-channel power FET with 60V DS breakdown voltage and 12.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.085 ohm max on resistance, and 51A pulsed drain current. Suitable for surface mount with Gull Wing terminals in a small outline package style.