SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUZ30AH3045AATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

450 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.13 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

PSMN012-60YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

89 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

59 A

1

e3

30

260

PSMN4R6-60BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

211 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

STD13N65M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

110 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

BUK7Y18-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

49 A

1

e3

30

260

FDC3612-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

2.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.6 A

JANSR2N7593U3

Microchip Technology

N-CHANNEL

SINGLE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

49.6 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.21 ohm

12.4 A

BOTTOM

R-CBCC-N3

MIL-19500; RH - 300K Rad(Si)

PSMN011-60MSX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

80 W

ENHANCEMENT MODE

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

58 A

STD80N4F6

STMicroelectronics

N-CHANNEL

SINGLE

YES

70 W

1

80 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

80 A

1

e3

260

AUIRF8736M2TR

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

1

137 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

137 A

1

BUK652R7-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK9Y15-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

95 W

ENHANCEMENT MODE

1

53 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

53 A

1

e3

30

260

CSD16327Q3

Texas Instruments

N-CHANNEL

SINGLE

YES

74 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

112 A

125 mJ

60 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0065 ohm

21 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

65 pF

IRF9640STRL

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

700 mJ

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

IRFP360PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

1200 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.2 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

STD12NF06T4T4

STMicroelectronics

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

12 A

1

e3

30

260

BSP317

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.37 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6 ohm

.34 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

e0

IRF620STRLPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

110 mJ

5.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

5.2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRL630PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

74 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

STD16N60M2

STMicroelectronics

N-CHANNEL

SINGLE

YES

110 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

VNP49N04-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

68 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

68 A

e3

2N3819-D27Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.35 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.05 A

e3

IRF620STRRPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

110 mJ

5.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

5.2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRF9Z34STRLPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

88 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

370 mJ

18 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.14 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFH7084TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

1

NVF3055L108T3G

Onsemi

N-CHANNEL

SINGLE

YES

2.1 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

3 A

1

e3

30

260

NVMFS5C460NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

SI2318DS-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3 A

e0

AUIRFR540ZTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

91 W

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

35 A

1

FQPF5N60CYDTU

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

33 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NVTFS5124PLWFTAG

Onsemi

P-CHANNEL

SINGLE

YES

18 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

6 A

1

e3

30

260

AOTF5N50FD

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

AUIRFS8403

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

123 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

123 A

1

BUK763R8-80E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

357 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK7Y102-100B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

15 A

1

e3

30

260

BUK9Y38-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

94.9 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

30 A

1

e3

30

260

FQPF4N90CT

Onsemi

N-CHANNEL

SINGLE

NO

47 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4 A

e3

PMXB56ENZ

NXP Semiconductors

N-CHANNEL

SINGLE

8.33 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

APT8M100B

Microchip Technology

N-CHANNEL

SINGLE

NO

290 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

415 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

1.8 ohm

7.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING, AVALANCHE RATED

TO-247AB

e1

BUK9Y53-100B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

23 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

23 A

1

e3

30

260

NVMFS5832NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

127 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

120 A

1

e3

30

260

NVMFS5832NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

127 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

120 A

1

e3

30

260

PSMN7R0-30MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

57 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

67 A

1

e3

30

260

BUK7Y3R5-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

167 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

FQPF47P06YDTU

Onsemi

P-CHANNEL

SINGLE

NO

62 W

1

30 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

30 A

e3

IRF9Z34STRRPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

88 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

370 mJ

18 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.14 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFC110

Microsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

100 V

NO LEAD

UNSPECIFIED

ENHANCEMENT MODE

1

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.6 ohm

3.5 A

UPPER

X-XUUC-N

Not Qualified

e0

NOT SPECIFIED

NOT SPECIFIED

IRL620PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

5.2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.