Texas Instruments - CSD16327Q3

CSD16327Q3 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD16327Q3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
Datasheet CSD16327Q3 Datasheet
In Stock5,123
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 112 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 74 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0065 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 125 mJ
Maximum Feedback Capacitance (Crss): 65 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 25 V
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 60 A
Peak Reflow Temperature (C): 260
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