Microchip Technology - JANSR2N7593U3

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JANSR2N7593U3 by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number JANSR2N7593U3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Package Style (Meter): CHIP CARRIER; Maximum Pulsed Drain Current (IDM): 49.6 A;
Datasheet JANSR2N7593U3 Datasheet
In Stock65
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12.4 A
Maximum Pulsed Drain Current (IDM): 49.6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 250 V
Maximum Power Dissipation (Abs): 75 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: MIL-19500; RH - 300K Rad(Si)
Maximum Drain-Source On Resistance: .21 ohm
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