SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FCPF11N60NTYDTU

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

32.1 W

ENHANCEMENT MODE

1

10.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10.8 A

FCPF850N80Z

Onsemi

N-CHANNEL

SINGLE

NO

28.4 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

6 A

e3

NOT SPECIFIED

NOT SPECIFIED

FDD8444L

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

153 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

295 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0107 ohm

16 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

FDS6612A-NB5E029A

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

8.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.4 A

1

e3

30

260

FDS8878-F123

Onsemi

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

10.2 A

1

e3

30

260

GS66502B-MR

Gan Systems

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

15 A

7.5 A

3

CHIP CARRIER

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-55 Cel

GOLD OVER NICKEL

.26 ohm

7.5 A

BOTTOM

R-PBCC-N3

3

SOURCE

e4

30

260

.5 pF

GS66508B-E01-MR

Gan Systems

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

650 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

30 A

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-55 Cel

GOLD OVER NICKEL

.063 ohm

30 A

BOTTOM

R-XBCC-N4

3

SOURCE

e4

30

260

1.5 pF

IRF240

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

125 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

72 A

18 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ns

-55 Cel

80 ns

.18 ohm

18 A

BOTTOM

O-MBFM-P2

DRAIN

TO-204AE

220 pF

IRF3315L

International Rectifier

N-CHANNEL

SINGLE

NO

94 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

350 mJ

21 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

94 W

175 Cel

SILICON

TIN LEAD

.082 ohm

21 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

e0

IRF6727MTR1PBF

International Rectifier

N-CHANNEL

SINGLE

YES

89 W

ENHANCEMENT MODE

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

180 A

IRF7401TRPBF-1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.5 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

1

IRF7807VD2TRPBF

International Rectifier

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

8.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.3 A

1

e3

30

260

IRF9510STRLPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

43 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

200 mJ

4 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

1.2 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFH8201TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

156 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

1

IRFH8202TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

160 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

1

IRFP450R

Intersil

N-CHANNEL

SINGLE

NO

180 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

IRFR120NTR

International Rectifier

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38 A

91 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

39 W

175 Cel

SILICON

TIN LEAD

.21 ohm

9.1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, FAST SWITCHING

TO-252AA

e0

IRFR120NTRR

International Rectifier

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38 A

91 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

39 W

175 Cel

SILICON

TIN LEAD

.21 ohm

9.1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, FAST SWITCHING

TO-252AA

e0

IRFR2209A

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.8 ohm

4.6 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

IRFR220PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

42 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.8 ohm

4.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRFS7430TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

375 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

195 A

1

e3

30

260

IRFZ48PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

190 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.018 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

30

260

JAN2N7236U

Defense Logistics Agency

P-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

500 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

18 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

TO-267AB

MIL-19500/595F

NVMFS5C404NLT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

352 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

352 A

1

e3

30

260

NVMFS5C404NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

352 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

352 A

1

e3

30

260

NVTFS5124PLWFTWG

Onsemi

P-CHANNEL

SINGLE

YES

18 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

6 A

1

e3

30

260

PMPB10XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

12.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

12.9 A

1

e3

30

260

PMPB23XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7 A

1

e3

30

260

PSMN013-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

170 W

ENHANCEMENT MODE

1

68 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

68 A

1

e3

30

245

PSMN017-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

45 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

32 A

e3

PSMN1R5-30BLEJ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

401 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

PSMN1R6-40YLC:115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

PSMN2R7-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

170 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN3R4-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

114 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN4R3-30BL,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

103 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN7R0-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

269 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMNR90-30BL,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

SI2302ADS

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

2.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A

SI4850EY-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

3.3 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

6 A

1

e3

SI7450DP-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

5.2 W

ENHANCEMENT MODE

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.2 A

e0

SI9407AEY-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

3 W

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

3.5 A

1

STH275N8F7-2AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STW40N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

32 A

NOT SPECIFIED

NOT SPECIFIED

SUB40N06-25L

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

40 A

e0

VNP10N06-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

42 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2N7002PT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.77 W

ENHANCEMENT MODE

1

.31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN

.31 A

1

e3

30

260

2SK543

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

3SK293(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

1

.03 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.