STMicroelectronics - STH275N8F7-2AG

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STH275N8F7-2AG by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STH275N8F7-2AG
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 315 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 180 A;
Datasheet STH275N8F7-2AG Datasheet
In Stock12,261
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 315 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 180 A
Maximum Drain Current (Abs) (ID): 180 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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