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| Manufacturer | Gan Systems |
|---|---|
| Manufacturer's Part Number | GS66502B-MR |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Moisture Sensitivity Level (MSL): 3; Maximum Drain-Source On Resistance: .26 ohm; |
| Datasheet | GS66502B-MR Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 7.5 A |
| Maximum Pulsed Drain Current (IDM): | 15 A |
| Surface Mount: | YES |
| Terminal Finish: | GOLD OVER NICKEL |
| No. of Terminals: | 3 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Drain-Source On Resistance: | .26 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Maximum Feedback Capacitance (Crss): | .5 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 650 V |
| Maximum Drain Current (Abs) (ID): | 7.5 A |
| Peak Reflow Temperature (C): | 260 |
