Toshiba - 3SK293(TE85L,F)

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3SK293(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 3SK293(TE85L,F)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .03 A;
Datasheet 3SK293(TE85L,F) Datasheet
NAME DESCRIPTION
Other Names: 3SK293TE85LF
3SK293(TE85LF)TR
3SK293(TE85LF)CT
3SK293 (TE85L,F
3SK293(TE85LF)DKR
3SK293 (TE85LF)
Maximum Power Dissipation (Abs): .1 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .03 A
Maximum Drain Current (Abs) (ID): .03 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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