NXP Semiconductors - PSMN1R6-40YLC:115

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PSMN1R6-40YLC:115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN1R6-40YLC:115
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; Maximum Drain Current (Abs) (ID): 100 A; Operating Mode: ENHANCEMENT MODE;
Datasheet PSMN1R6-40YLC:115 Datasheet
In Stock202
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 288 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 100 A
Maximum Drain Current (Abs) (ID): 100 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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