Vishay Intertechnology - SI9407AEY-T1-E3

  1. Home
  2. Vishay Intertechnology - SI9407AEY-T1-E3
SI9407AEY-T1-E3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI9407AEY-T1-E3
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;
Datasheet SI9407AEY-T1-E3 Datasheet
In Stock941
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 3.5 A
Maximum Drain Current (Abs) (ID): 3.5 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
941 - -

Popular Products

Category Top Products

IRF7343TRPBF by Infineon Technologies

IRF7343TRPBF

Infineon Technologies

IRF7343TRPBF by Infineon is a Power FET with N-Channel and P-Channel types. It has 2 separate elements with built-in diode for switching applications. Features include 55V DS breakdown voltage, 38A max pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices.
IPT020N10N3ATMA1 by Infineon Technologies

IPT020N10N3ATMA1

Infineon Technologies

IPT020N10N3ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1200A IDM, and 0.02 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
IRLML2502TRPBF by International Rectifier

IRLML2502TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm;
LTC4451AV#TRMPBF by Analog Devices

LTC4451AV#TRMPBF

Analog Devices

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
SI7461DP-T1-E3 by Vishay Intertechnology

SI7461DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7461DP-T1-E3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A ID, and 0.0145 ohm RDS(on). Ideal for SWITCHING applications, it features a 60A IDM and 125mJ EAS in a SMALL OUTLINE package with an operating temp of 150°C.
IRF3205PBF by International Rectifier

IRF3205PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
BSZ15DC02KDHXTMA1 by Infineon Technologies

BSZ15DC02KDHXTMA1

Infineon Technologies

Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
NDT452AP by National Semiconductor

NDT452AP

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Pulsed Drain Current (IDM): 15 A; Package Body Material: PLASTIC/EPOXY;
FDS2582 by Fairchild Semiconductor

FDS2582

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 150 V; Maximum Drain Current (Abs) (ID): 4.1 A;
FDS6982AS_NL by Fairchild Semiconductor

FDS6982AS_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
IRF3205ZPBF by Infineon Technologies

IRF3205ZPBF

Infineon Technologies

IRF3205ZPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 440A IDM, 250mJ EAS, and 0.0065 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 170W at 175°C.
SI7469ADP-T1-RE3 by Vishay Intertechnology

SI7469ADP-T1-RE3

Vishay Intertechnology

Vishay Intertechnology's SI7469ADP-T1-RE3 is a P-channel FET with 80V DS breakdown voltage and 125A IDM. Ideal for switching applications, it features a built-in diode, 0.027 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 5 terminals, this MOSFET has a max power dissipation of 73.5W and can withstand temperatures from -55 to 150°C.
BSP613PH6327XTSA1 by Infineon Technologies

BSP613PH6327XTSA1

Infineon Technologies

BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
IPD90P04P405ATMA1 by Infineon Technologies

IPD90P04P405ATMA1

Infineon Technologies

IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.
FQB34N20LTM by Fairchild Semiconductor

FQB34N20LTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
2N7000 by North American Philips Discrete Products Div

2N7000

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
IRF640 by Samsung

IRF640

Samsung

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
FDMS86252L by Fairchild Semiconductor

FDMS86252L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;
IRF840PBF by Vishay Intertechnology

IRF840PBF

Vishay Intertechnology

Vishay Intertechnology's IRF840PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 32A IDM and 510mJ EAS ratings. The transistor operates in ENHANCEMENT MODE with 0.85 ohm RDS(on) and can handle up to 125W power dissipation.
FDD4141 by Fairchild Semiconductor

FDD4141

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Terminal Finish: MATTE TIN; Terminal Position: SINGLE;