Image shown is a representation only.
| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | SGT120R65AL |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 192 W; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL; |
| Datasheet | SGT120R65AL Datasheet |
| In Stock | 61 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 15 A |
| Maximum Pulsed Drain Current (IDM): | 36 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 192 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .12 ohm |
| Other Names: |
497-SGT120R65ALTR 497-SGT120R65ALCT 497-SGT120R65ALDKR |
| Maximum Feedback Capacitance (Crss): | .9 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 650 V |
| Additional Features: | BULK: 3000 |









