Onsemi - NVD4809NHT4G

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NVD4809NHT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVD4809NHT4G
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 58 A;
Datasheet NVD4809NHT4G Datasheet
In Stock1,114
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 58 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 52 W
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 58 A
Moisture Sensitivity Level (MSL): 1
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