Analog Devices - AD3955

  1. Home
  2. Analog Devices - AD3955
AD3955 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number AD3955
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Operating Mode: DEPLETION MODE; JESD-609 Code: e0;
In Stock955
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: DEPLETION MODE
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
955 - -

Popular Products

Category Top Products

IRLML0030TRPBF by International Rectifier

IRLML0030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Transistor Element Material: SILICON;
IAUT300N10S5N015ATMA1 by Infineon Technologies

IAUT300N10S5N015ATMA1

Infineon Technologies

Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
IRLML6346TRPBF by International Rectifier

IRLML6346TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
AUIRFN8459TR by International Rectifier

AUIRFN8459TR

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; No. of Terminals: 6; Avalanche Energy Rating (EAS): 66 mJ;
IRLML2502TR by International Rectifier Hirel Products

IRLML2502TR

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 33 A; Maximum Drain-Source On Resistance: .045 ohm;
IRFZ44NSTRR by International Rectifier

IRFZ44NSTRR

International Rectifier

IRFZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.0175 ohm Drain-Source On Resistance and 94W Max Power Dissipation in a SMALL OUTLINE package.
AUIRF5210STRL by International Rectifier

AUIRF5210STRL

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
IRF3205ZSPBF by International Rectifier

IRF3205ZSPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF7319TRPBF by International Rectifier

IRF7319TRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
FDD8424H_F085 by Onsemi

FDD8424H_F085

Onsemi

Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
IRF640 by NXP Semiconductors

IRF640

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
CSD18563Q5A-P by Texas Instruments

CSD18563Q5A-P

Texas Instruments

CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
NCV8406ASTT1G by Onsemi

NCV8406ASTT1G

Onsemi

NCV8406ASTT1G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in temperatures from -40 to 150 °C.
FDD6637 by Fairchild Semiconductor

FDD6637

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BSC123N08NS3GATMA1 by Infineon Technologies

BSC123N08NS3GATMA1

Infineon Technologies

BSC123N08NS3GATMA1 by Infineon is a N-CHANNEL FET with 80V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 66W. This MOSFET has a drain-source on resistance of 0.0123 ohm and can handle up to 150°C operating temperature.
IRF7309TRPBF by Infineon Technologies

IRF7309TRPBF

Infineon Technologies

IRF7309TRPBF by Infineon is a Power FET with N-Channel and P-Channel types, suitable for switching applications. It features 2 elements with built-in diode, a max drain current of 4A, and a min DS breakdown voltage of 30V. With a package style of small outline and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
FDD86102LZ by Onsemi

FDD86102LZ

Onsemi

FDD86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 40A Pulsed Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount, this transistor has a max power dissipation of 54W and can handle up to 8A Drain Current.
FQP27P06 by Fairchild Semiconductor

FQP27P06

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
PSMN4R8-100BSEJ by Nexperia

PSMN4R8-100BSEJ

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Maximum Pulsed Drain Current (IDM): 707 A; Terminal Form: GULL WING;
IRFR3710ZTRPBF by Infineon Technologies

IRFR3710ZTRPBF

Infineon Technologies

IRFR3710ZTRPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 220A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 175°C.