Analog Devices - AD3958

  1. Home
  2. Analog Devices - AD3958
AD3958 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number AD3958
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DEPLETION MODE; No. of Elements: 1;
In Stock772
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: DEPLETION MODE
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
772 - -

Popular Products

Category Top Products

IRF3205ZLPBF by International Rectifier

IRF3205ZLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MSC035SMA170B by Microchip Technology

MSC035SMA170B

Microchip Technology

Power Field-Effect Transistors;
IRFZ44NSTRLPBF by International Rectifier

IRFZ44NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 49 A; Avalanche Energy Rating (EAS): 150 mJ;
IRLML6402GTRPBF by International Rectifier

IRLML6402GTRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
STP11NK50Z by STMicroelectronics

STP11NK50Z

STMicroelectronics

STP11NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.52 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 125W and can withstand up to 150°C temperature.
IRFP460APBF by Vishay Intertechnology

IRFP460APBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
FDMS86263P by Onsemi

FDMS86263P

Onsemi

The Onsemi FDMS86263P is a P-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 70A and EAS of 384mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package style and -55 to 150 °C temperature range, it offers efficient performance in various electronic systems.
JANTX2N6796U by International Rectifier

JANTX2N6796U

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Turn On Time (ton): 105 ns; Maximum Power Dissipation Ambient: 25 W;
FQD7P20TM by Fairchild Semiconductor

FQD7P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
SQ2361ES-T1_GE3 by Vishay Intertechnology

SQ2361ES-T1_GE3

Vishay Intertechnology

The Vishay Intertechnology SQ2361ES-T1_GE3 is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 11A and an avalanche energy rating of 7.8mJ. This transistor is suitable for applications requiring high power and efficient switching capabilities.
IRF640 by Samsung

IRF640

Samsung

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
BSP315PH6327XTSA1 by Infineon Technologies

BSP315PH6327XTSA1

Infineon Technologies

Infineon's BSP315PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for power applications. Features include 4.68A IDM, 24mJ EAS, and 0.8 ohm RDS(ON). Suitable for automotive electronics due to AEC-Q101 compliance and high temp rating of 150°C.
BSL606SNH6327XTSA1 by Infineon Technologies

BSL606SNH6327XTSA1

Infineon Technologies

Infineon's BSL606SNH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 18.1A IDM for automotive applications. It features a built-in diode, 0.06 ohm RDS(on), and operates in the -55 to 150°C temperature range, meeting AEC-Q101 standards.
IRFR9120NTRPBF by International Rectifier

IRFR9120NTRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .48 ohm;
BSC190N15NS3GATMA1 by Infineon Technologies

BSC190N15NS3GATMA1

Infineon Technologies

Infineon BSC190N15NS3GATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 170mJ EAS, and 0.019 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 125W in a small outline package.
IRFR3410TRPBF by International Rectifier

IRFR3410TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
FDMC86102LZ by Fairchild Semiconductor

FDMC86102LZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; No. of Terminals: 5; Peak Reflow Temperature (C): 260;
IRF4905PBF by International Rectifier

IRF4905PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
ZVN2110GTA by Diodes Incorporated

ZVN2110GTA

Diodes Incorporated

ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.
IRF1010NSTRLPBF by International Rectifier

IRF1010NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Qualification: Not Qualified; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;