NXP Semiconductors - BUK9E06-55A,127

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BUK9E06-55A,127 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9E06-55A,127
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 154 A;
Datasheet BUK9E06-55A,127 Datasheet
In Stock397
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 154 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 300 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 154 A
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