New Jersey Semiconductor Products - BUK553

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BUK553 by New Jersey Semiconductor Products

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Manufacturer New Jersey Semiconductor Products
Manufacturer's Part Number BUK553
Description N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 200 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
Datasheet BUK553 Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 200 V
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 14 A
Polarity or Channel Type: N-CHANNEL
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