Alpha & Omega Semiconductor - AOT14N50FD

  1. Home
  2. Alpha & Omega Semiconductor - AOT14N50FD
AOT14N50FD by Alpha & Omega Semiconductor

Image shown is a representation only.

Manufacturer Alpha & Omega Semiconductor
Manufacturer's Part Number AOT14N50FD
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; Maximum Drain Current (Abs) (ID): 14 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet AOT14N50FD Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 278 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 14 A
Maximum Drain Current (Abs) (ID): 14 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FQD7P20TM by Onsemi

FQD7P20TM

Onsemi

FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
IRFR024NTRPBF by International Rectifier

IRFR024NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Drain Current (ID): 17 A; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
IRFP460LC by International Rectifier

IRFP460LC

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
FDMS86300DC by Fairchild Semiconductor

FDMS86300DC

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
STW12NK90Z by STMicroelectronics

STW12NK90Z

STMicroelectronics

STW12NK90Z by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 230W, this transistor has a 0.88 ohm RDS(on) and can handle up to 11A drain current.
IPB200N25N3GATMA1 by Infineon Technologies

IPB200N25N3GATMA1

Infineon Technologies

Infineon's IPB200N25N3GATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 0.02 ohm max RDS(on), and 256A IDM. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features GULL WING terminals, can handle up to 175°C, and has an EAS of 320mJ.
IRF530NPBF by Infineon Technologies

IRF530NPBF

Infineon Technologies

IRF530NPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 60A IDM, and 93mJ EAS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 70W and can handle temperatures from -55 to 175 °C.
IRFP4668PBF by International Rectifier

IRFP4668PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; No. of Elements: 1; Maximum Drain Current (ID): 130 A;
FDS2582 by Fairchild Semiconductor

FDS2582

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 150 V; Maximum Drain Current (Abs) (ID): 4.1 A;
NTR4501NT1G by Onsemi

NTR4501NT1G

Onsemi

NTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
IRF540ZLPBF by Infineon Technologies

IRF540ZLPBF

Infineon Technologies

IRF540ZLPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 92W and 0.0265 ohm Drain-Source On Resistance. Operating at up to 175°C, it features a METAL-OXIDE SEMICONDUCTOR technology in an IN-LINE package style.
G3R75MT12K by Genesic Semiconductor

G3R75MT12K

Genesic Semiconductor

Power Field-Effect Transistors;
IRLML6401TR by International Rectifier

IRLML6401TR

International Rectifier

IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
NDT2955 by National Semiconductor

NDT2955

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD4141 by Onsemi

FDD4141

Onsemi

The Onsemi FDD4141 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has low 0.0123 ohm Drain-Source Resistance and can handle up to 69W power dissipation.
SI4532DY by Onsemi

SI4532DY

Onsemi

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
IPD90P04P405ATMA1 by Infineon Technologies

IPD90P04P405ATMA1

Infineon Technologies

IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.
IRF640 by Unitrode

IRF640

Unitrode

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
STP80NF10 by STMicroelectronics

STP80NF10

STMicroelectronics

STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
IRLR3110ZTRPBF by Infineon Technologies

IRLR3110ZTRPBF

Infineon Technologies

IRLR3110ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling up to 250A pulsed drain current. With 0.014 ohm max on-resistance and 175°C max operating temp, it's suitable for high-power systems.