Infineon Technologies - JANTXVR2N7485U3

JANTXVR2N7485U3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXVR2N7485U3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Avalanche Energy Rating (EAS): 65 mJ; Case Connection: DRAIN;
Datasheet JANTXVR2N7485U3 Datasheet
In Stock273
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 75 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Avalanche Energy Rating (EAS): 65 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 130 V
Qualification: Qualified
Additional Features: RADIATION HARDENED
Reference Standard: MIL-19500/704
Maximum Drain Current (Abs) (ID): 20 A
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Pricing (USD)

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