Infineon Technologies - IRFB3407ZPBF

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IRFB3407ZPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFB3407ZPBF
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRFB3407ZPBF Datasheet
In Stock2,944
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 230 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 120 A
Maximum Drain Current (Abs) (ID): 120 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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