NXP Semiconductors - BLF6G20S-45,112

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BLF6G20S-45,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G20S-45,112
Description N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 13 A; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
Datasheet BLF6G20S-45,112 Datasheet
In Stock19
NAME DESCRIPTION
Other Names: 934061037112
568-8646
BLF6G20S-45,112-ND
BLF6G20S45112
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 13 A
Maximum Drain Current (Abs) (ID): 13 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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