NXP Semiconductors - PSMN2R6-60PSQ

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PSMN2R6-60PSQ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN2R6-60PSQ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 326 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 150 A;
Datasheet PSMN2R6-60PSQ Datasheet
In Stock3,979
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 326 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 150 A
Maximum Drain Current (Abs) (ID): 150 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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