Infineon Technologies - BF998R-E6327

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BF998R-E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BF998R-E6327
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .03 A; Operating Mode: DUAL GATE, DEPLETION MODE;
Datasheet BF998R-E6327 Datasheet
In Stock731
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .03 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Maximum Power Dissipation (Abs): .2 W
No. of Elements: 1
Operating Mode: DUAL GATE, DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .03 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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