Vishay Intertechnology - SIJ482DP-T1-GE3

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SIJ482DP-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIJ482DP-T1-GE3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69.4 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 60 A;
Datasheet SIJ482DP-T1-GE3 Datasheet
In Stock16,259
NAME DESCRIPTION
Other Names: SIJ482DP-T1-GE3DKR
SIJ482DP-T1-GE3DKRINACTIVE
SIJ482DP-T1-GE3TR
SIJ482DP-T1-GE3DKR-ND
SIJ482DP-T1-GE3CT
SIJ482DPT1GE3
Maximum Power Dissipation (Abs): 69.4 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 60 A
Maximum Drain Current (Abs) (ID): 60 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

Qty. Unit Price Ext. Price
16,259 $6.360 $103,407.240

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