4 Varactor Diodes 20

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MV7005T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN LEAD	R-PDSO-G4	CATHODE	Not Qualified	.8 W			TO-261AA	13.04 %	15 V	e0			SILICON	12
MV7404T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN LEAD	R-PDSO-G4	CATHODE	Not Qualified	.8 W	120 pF		TO-261AA	20 %	12 V	e0			SILICON	10
933840030215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G4		Not Qualified		16.5 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON
BBY62235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G4		Not Qualified		16.5 pF								SILICON
BBY62TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G4		Not Qualified		17.5 pF								SILICON	9.7
BBY62TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G4		Not Qualified		17.5 pF								SILICON	9.7
BBY62-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G4	CATHODE	Not Qualified		16.5 pF				30 V	e3			SILICON
BBY62212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G4		Not Qualified		16.5 pF								SILICON
BBY62,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G4	CATHODE	Not Qualified		16.5 pF				30 V	e3			SILICON
BBY62T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	85 Cel		MATTE TIN	R-PDSO-G4	CATHODE	Not Qualified		16.5 pF				30 V	e3			SILICON
BBY62	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G4	CATHODE	Not Qualified		16.5 pF				30 V	e3			SILICON
BBY51-07	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE	Varactors	7 V			TIN LEAD	R-PDSO-G4		Not Qualified		5.3 pF			11.11 %	7 V	e0			SILICON	1.55
BBY58-07L4	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR		UNSPECIFIED	SEPARATE, 2 ELEMENTS	HYPERABRUPT		.1 uA	2	8 V	CHIP CARRIER	Other Diodes	10 V	150 Cel	-55 Cel	TIN LEAD	R-XBCC-N4		Not Qualified		18.3 pF			4.89 %	10 V	e0			SILICON	1.15
BBY51-07E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE					MATTE TIN	R-PDSO-G4		Not Qualified		5.3 pF				7 V	e3			SILICON	1.55
BBY51-07E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE					MATTE TIN	R-PDSO-G4		Not Qualified		5.3 pF				7 V	e3			SILICON	1.55
BBY58-07F	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT			2		SMALL OUTLINE						R-PDSO-F4		Not Qualified		18.3 pF	HIGH Q		4.89 %	10 V				SILICON	2.8
JDV4P08T	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-PDSO-F4		Not Qualified		18.3 pF			5.46 %		e0			SILICON	2.8
JDV4P08U	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	10 V	125 Cel		TIN LEAD	R-PDSO-G4		Not Qualified		18.3 pF			5.46 %		e0			SILICON	2.8
1SV306	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS		ULTRA HIGH FREQUENCY	.003 uA	2	15 V	SMALL OUTLINE	Varactors	15 V	125 Cel		TIN LEAD	R-PDSO-G4		Not Qualified		15 pF			6.67 %	15 V	e0			SILICON	2
HVB350BYP	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR		PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	15 V	125 Cel			R-PDSO-G4		Not Qualified		16.25 pF			4.62 %					SILICON	2.8

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.