RECTANGULAR Varactor Diodes 1,882

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Reverse Recovery Time	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB66402VE7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				41.8 pF		6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB659C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	30 V				R-PDSO-F2	1	Not Qualified		39 pF		7.01 %	35 V					SILICON	9.5
BB814E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	20 V				R-PDSO-G3		Not Qualified		44.75 pF			20 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.05
BB689H7908XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BB804E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE	Varactors	18 V			Matte Tin (Sn)	R-PDSO-G3		Not Qualified				6.15 %	18 V		e3			SILICON	1.65
BAW222E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS			.1 A	.715 V	.004 us		2		SMALL OUTLINE	Rectifier Diodes	85 V	150 Cel		MATTE TIN	R-PDSO-G3		Not Qualified	.25 W	1.5 pF			85 V	4.5 A	e3			SILICON
BB837	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE							1		SMALL OUTLINE	Varactors	35 V			TIN	R-PDSO-G2	1	Not Qualified		6.6 pF	LOW INDUCTANCE	9.09 %			e3			SILICON	10.2
BB857E7902XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE							1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified		6.6 pF		9.09 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	10.2
BB644E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		41.8 pF		6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB644E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2				41.8 pF		6.59 %	30 V		e3			SILICON	11
BB68902VH7908XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %				NOT SPECIFIED	NOT SPECIFIED	SILICON	14.5
BB644E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		41.8 pF		6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB664H7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				41.8 pF		6.59 %	30 V					SILICON	11
BB545E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		20 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	9
BB535E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified		18.7 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	8.2
BB669	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-G2	1	Not Qualified		56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %						SILICON	14.5
BB664-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2		Not Qualified		41.8 pF		6.59 %	30 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	11
BB804-SF2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS							2		SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified					18 V		e3			SILICON	1.65
BB833E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		S BAND					1		SMALL OUTLINE	Varactors	35 V			Matte Tin (Sn)	R-PDSO-G2	1	Not Qualified		9.3 pF		8.11 %	35 V		e3	40	260	SILICON	11
BB669E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY					1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2				56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %						SILICON	14.5
BBY55-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	16 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		18.6 pF		5.66 %	16 V		e3		260	SILICON	2
BBY51-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	7 V				R-PDSO-F2	1	Not Qualified		5.4 pF	LOW INDUCTANCE	6.48 %	7 V					SILICON	1.55
BBY55-02WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	16 V				R-PDSO-F2		Not Qualified		18.6 pF		5.66 %	16 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BBY51-02WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		5.4 pF		6.48 %	7 V		e3		260	SILICON	1.55
BBY57-02W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	10 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		17.5 pF	LOW INDUCTANCE	5.98 %	10 V		e3			SILICON	3
BBY5503WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1			18.6 pF	LOW INDUCTANCE	5.66 %	16 V		e3			SILICON	2
BBY6605WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT						1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1			68.7 pF	HIGH Q	4 %	12 V		e3			SILICON	5
BBY53-03L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		CHIP CARRIER					MATTE TIN	R-PBCC-N3		Not Qualified		5.3 pF		9.43 %	6 V		e3			SILICON	1.8
BBY51-02WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	7 V				R-PDSO-F2		Not Qualified		5.4 pF		6.48 %	7 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.55
BBY5103WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE						R-PDSO-G2				5.4 pF		6.48 %	7 V					SILICON	1.55
BBY58-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	10 V			TIN	R-PDSO-F2	1	Not Qualified		18.3 pF		4.89 %	10 V		e3			SILICON	1.15
BBY5502WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2				18.6 pF	LOW INDUCTANCE	5.66 %	16 V					SILICON	2
BBY59-02VE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2		Not Qualified		27.8 pF		4.32 %	15 V		e3			SILICON	3.4
BBY59-02VE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	15 V			MATTE TIN	R-PDSO-F2	1	Not Qualified		27.8 pF		4.32 %	15 V		e3		260	SILICON	3.4
BBY51-02LE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT						1		CHIP CARRIER	Varactors	7 V			MATTE TIN	R-XBCC-N2		Not Qualified		5.4 pF		6.48 %	7 V		e3		260	SILICON	1.55
BBY52-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT						2		SMALL OUTLINE	Varactors	7 V				R-PDSO-G3	1	Not Qualified		1.85 pF	HIGH Q	22.22 %	7 V					SILICON	1.1
BBY52E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT						2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		1.85 pF			7 V					SILICON	1.1
BBY51-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G2	1	Not Qualified		5.4 pF		6.48 %	7 V		e3		260	SILICON	1.55
BBY53-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT						1		CHIP CARRIER	Varactors	6 V	125 Cel	-55 Cel		R-XBCC-N2		Not Qualified		5.3 pF		9.43 %	6 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
BBY55-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT						2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G3	1	Not Qualified		15 pF	HIGH Q, LOW INDUCTANCE	6.67 %	16 V					SILICON	2
BBY58-06W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT						2		SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1	Not Qualified		18.3 pF	LOW INDUCTANCE	4.89 %	10 V					SILICON	1.15
BBY66-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors				TIN	R-PDSO-F2	1	Not Qualified		68.7 pF		4 %	12 V		e3			SILICON	5
BB555-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY					1		SMALL OUTLINE	Varactors	35 V				R-PDSO-F2	1	Not Qualified		18.7 pF	LOW INDUCTANCE	6.67 %	30 V					SILICON	6
BBY52-02L	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT						1		CHIP CARRIER	Varactors	7 V				R-XBCC-N2		Not Qualified		1.85 pF		22.22 %	7 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.1
BBY56-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY				.005 uA	1	6 V	SMALL OUTLINE		10 V	150 Cel	-55 Cel		R-PDSO-F2				40 pF						NOT SPECIFIED	NOT SPECIFIED	SILICON	2.15
BBY66-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT						2		SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1	Not Qualified		68.7 pF	HIGH Q	4 %	12 V					SILICON	5
BBY53E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT						2		SMALL OUTLINE	Varactors	6 V				R-PDSO-G3		Not Qualified		5.3 pF			6 V					SILICON	1.8
BBY65-02V	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT						1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1	Not Qualified		29.5 pF		4.41 %	15 V		e3			SILICON	10

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.