Infineon Technologies - BBY6605WH6327XTSA1

LV2209RLRP by Onsemi is a single varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic devices.

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BB240TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 14, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

MMBV2105LT1 by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Nominal Diode Capacitance: 64 pF; Maximum Repetitive Peak Reverse Voltage: 33 V;

1N5456A by Onsemi is a varactor diode with 175 min. quality factor, 100 pF nominal capacitance, and 30 V min. breakdown voltage. Ideal for ultra-high frequency applications due to its abrupt variable capacitance classification. Package: Glass, Config: Single, Terminals: 2.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 15 V; Nominal Diode Capacitance: 81 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2105RL by Onsemi is a single varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 30 V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

1N4801 by Onsemi is a varactor diode with 6.8 pF capacitance, 100 V reverse voltage, and 0.005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE;

1N5696 by Onsemi is a varactor diode with 450 min Quality Factor, 6.8 pF nominal capacitance, and 65 V min breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp ranges from -65 to 175 °C.

LV2205RLRM by Onsemi is a single varactor diode with a min quality factor of 400, ideal for applications requiring variable capacitance. With a nominal capacitance of 15 pF and a min breakdown voltage of 25 V, this diode operates at temperatures up to 150 °C, making it suitable for high-performance electronic circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Diode Element Material: SILICON;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi SVD201 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 1.9 pF, it has a min breakdown voltage of 27 V and operates at temperatures up to 150 °C. This surface-mount diode in microwave package style is made of gallium arsenide and offers a max power dissipation of 0.2 W.