Infineon Technologies - BBY6605WH6327XTSA1

  1. Home
  2. Infineon Technologies - BBY6605WH6327XTSA1
BBY6605WH6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY6605WH6327XTSA1
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BBY6605WH6327XTSA1 Datasheet
In Stock754
NAME DESCRIPTION
Other Names: BBY 66-05W H6327
BBY 66-05W H6327-ND
2156-BBY6605WH6327XTSA1TR
BBY6605WH6327XTSA1TR
SP000743582
Package Body Material: PLASTIC/EPOXY
Variable Capacitance Diode Classification: HYPERABRUPT
Config: COMMON CATHODE, 2 ELEMENTS
Diode Type: VARIABLE CAPACITANCE DIODE
Diode Cap Tolerance: 4 %
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Nominal Diode Capacitance: 68.7 pF
Diode Element Material: SILICON
No. of Terminals: 3
Minimum Diode Capacitance Ratio: 5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
Minimum Breakdown Voltage: 12 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: HIGH Q
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
754 - -

Popular Products

Category Top Products

1N4786 by Onsemi

1N4786

Onsemi

1N4786 by Onsemi is a Varactor Diode with 15 min Quality Factor, 6.8 pF Nominal Capacitance, and -65 to 150 °C Operating Temp. Ideal for RF tuning circuits in communication devices due to its abrupt Variable Capacitance classification.
MDX640 by Texas Instruments

MDX640

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 12 V; Minimum Quality Factor: 33;
BB179 by NXP Semiconductors

BB179

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BBY39212 by NXP Semiconductors

BBY39212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB156,135 by NXP Semiconductors

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX599M by Texas Instruments

MDX599M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V;
1N4797 by Onsemi

1N4797

Onsemi

1N4797 by Onsemi is a varactor diode with 56pF nominal capacitance, abrupt variable capacitance classification, and 15V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor and low reverse current of 0.005uA.
BB170X by NXP Semiconductors

BB170X

NXP Semiconductors

Varactors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
934057928215 by NXP Semiconductors

934057928215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE;
MV1650 by Onsemi

MV1650

Onsemi

The Onsemi MV1650 is a single varactor diode with glass package, ideal for applications requiring variable capacitance. With a nominal capacitance of 100pF and min breakdown voltage of 20V, it operates b/w -65 °C to 200°C. Its isolated case connection and wire terminal form make it suitable for diverse electronic circuits.
1N4791 by Onsemi

1N4791

Onsemi

1N4791 by Onsemi is a varactor diode with 18pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for tuning circuits due to its high-quality factor and low reverse current of 0.005uA.
BB804WT/R by NXP Semiconductors

BB804WT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB145C by NXP Semiconductors

BB145C

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB182 by NXP Semiconductors

BB182

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC704-TL-E by Onsemi

SVC704-TL-E

Onsemi

VARIABLE CAPACITANCE DIODE; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Diode Element Material: SILICON; Terminal Finish: Tin/Bismuth (Sn/Bi);
934056828315 by NXP Semiconductors

934056828315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934042240135 by NXP Semiconductors

934042240135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX588M by Texas Instruments

MDX588M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .225 pF;
1N4795 by Onsemi

1N4795

Onsemi

1N4795 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 22V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.005uA.
BB809133 by NXP Semiconductors

BB809133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;